| PART |
Description |
Maker |
| SPP08P06P09 SPP08P06PG |
8.8 A, 60 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
P-Channel Enhancement mode Avalanche rated dv/dt rated
|
Infineon Technologies AG
|
| BUZ103S Q67040-S4009-A2 |
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated 175C operating temperature)
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated 175°C operating temperature)
SIPMOS ? Power Transistor
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated 175∑C operating temperature)
|
Infineon
Siemens Semiconductor Group
SIEMENS AG
|
| IPD400N06NG IPD400N06NG08 |
OptiMOS? Power-Transistor Features N-channel enhancement - normal level Avalanche rated
OptiMOS庐 Power-Transistor Features N-channel enhancement - normal level Avalanche rated
|
Infineon Technologies AG
|
| SFF23N60S1 SFF23N60S2 FT0029B FT0029B-15 |
Avalanche Rated N-channel MOSFET
|
Solid States Devices, Inc
Solid States Devices, I...
|
| SFF116N10M SFF116N10Z |
Avalanche Rated N-channel MOSFET
|
Solid States Devices, Inc
|
| SFF44N50S1 SFF44N50S2 |
Avalanche Rated N-channel MOSFET
|
Solid States Devices, Inc
|
| IXTK120N20P |
N-Channel Enhancement Mode Avalanche Rated
|
IXYS Corporation
|
| IXTY1R4N60P IXTP1R4N60P IXTU1R4N60P |
N-Channel Enhancement Mode Avalanche Rated
|
IXYS Corporation
|
| IXTP2N100P IXTY2N100P IXTA2N100P |
N-Channel Enhancement Mode Avalanche Rated
|
IXYS Corporation
|
| IXTC160N10T |
N-Channel Enhancement Mode Avalanche Rated
|
IXYS Corporation
|
| IXTP6N50P |
N-Channel Enhancement Mode Avalanche Rated
|
IXYS Corporation
|
